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首页 > Products > SI2318CDS-T1-GE3 SI2318CDS mosfet transistor
SI2318CDS-T1-GE3 SI2318CDS mosfet transistor
单价 $0.12 / Pieces对比
询价 暂无
浏览 85
发货 Chinaguangdongshenzhen
库存 1000000Pieces
过期 长期有效
更新 2020-08-08 09:54
 
详细信息
Product Name: SI2318CDS-T1-GE3 SI2318CDS mosfet transistor Model NO.: SI2318CDS-T1-GE3 Material: Silicon Structure: Diffusion Function: Power Triode, Switching Triode Power Level: Medium Power Working Frequency: Low Frequency Installation: SMD Triode Encapsulation Structure: Chip Transistor Certification: RoHS, CE, CCC MFG.: VISHAY Quality: Genuine New Original Package: SOT-23 D/C: 18+ Transport Package: Box Specification: integrated circuit Origin: China HS Code: 8542390000 Product Description DescriptionSI2318CDS-T1-GE3: Trans MOSFET N-CH 40V 4.3A 3-Pin SOT-23 T/R - Tape and ReelPackage: SOT-23Mfr. Part#: SI2318CDS-T1-GE3Mfr.: VISHAYDatasheet:(e-mail or chat us for PDF file)ROHS Status:Quality: 100% OriginalWarranty: 180 daysPart StatusActiveFET TypeN-ChannelTechnologyMOSFET (metal Oxide)Drain to Source Voltage (Vdss)40VCurrent - Continuous Drain (Id) @ 25°C5.6A (Tc)Drive Voltage (Max Rds On, Min Rds On)4.5V, 10VRds On (Max) @ Id, Vgs42 mOhm @ 4.3A, 10VVgs(th) (Max) @ Id2.5V @ 250µAGate Charge (Qg) (Max) @ Vgs9nC @ 10VVgs (Max)±20VInput Capacitance (Ciss) (Max) @ Vds340pF @ 20VFET Feature-Power Dissipation (Max)1.25W (Ta), 2.1W (Tc)Operating Temperature-55°C ~ 150°C (TJ)Mounting TypeSurface MountSupplier Device PackageSOT-23-3 (TO-236)Package / CaseTO-236-3, SC-59, SOT-23-3Why choosing usLocated in Shenzhen, the electronic market center of China.100% guarantee components quality: Genuine Original.Sufficient stock on your urgent demand.Sophisticated colleagues help you solve problems to reduce your risk with on-demand manufacturingFaster shipment: In stock components can ship the same day .24 Hours serviceNotice:Product images are for reference only.You can contact sales person to apply for abetter price.For more products, Pls do not hesitate to contact our Sales team.